Ion implantation technology refers to doping boron, phosphorus and arsenic plasma on the surface of semiconductor wafers to change its electrical characteristics and device conductivity, or to use non-doped elements such as germanium and carbon to achieve the goal of modifying the surface properties of wafer materials. The ion source is the core component of the ion implanter, mainly composed of various tungsten and molybdenum components. The ion implantation industry has very stringent requirements for impurity elements. Any excess of impurity elements may cause contamination and failure of ion implantation materials. Therefore, tungsten or molybdenum materials for ion implantation must first meet their strict requirements for chemical purity .

Solution advantages

In addition, density is also an important performance reference index, because most of the tungsten or molybdenum parts in the ion source will be bombarded or corroded by electrons during use. Low density will seriously affect the service life of parts. Good quality comes from the material. Rheniumet is the first manufacturer of ultra-high purity tungsten and molybdenum powder raw materials for semiconductor target grade (purity exceeding 5N) that has achieved industrial scale production in China. For tungsten and molybdenum parts for ion implantation, customers are recommended to use 4N Or 5N grade high-purity raw materials, manufactured by powder metallurgy, forging and rolling, precision machining and other processes

Tungsten materials and finished parts for ion implantation：It is manufactured using 4N or 5N grade high-purity raw materials through powder metallurgy, forging and rolling, precision machining and other processes.

Molybdenum materials and finished parts for ion implantation：It is manufactured using 4N or 5N grade high-purity raw materials through powder metallurgy, forging and rolling, precision machining and other processes.