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High purity tungsten target

Rhenium series

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High purity tungsten target

High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5N or 6N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
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Application:

High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5N or 6N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.

 

Specification:

Name

Molecular formula Specification

Size

Relative density Grain size Defect rate
Tungsten target

W

4N(99.99%)

Inch

mm

≥99%

≯50µm

0

5N(99.999%)

D(6,8,10,12)

H(0.25,0.5,0.75)

Diameter 150~350

Thickness 6~25

Tungsten Titanium Target

WTi10

WTi20

4N(99.99%)

≥99%

≯50µm

0

4N5(99.995%)

 

Chemical component

           Specification grade

Chemical index

 W/(W+Ti)≥99.99%

 W/(W+Ti)≥99.995%

 W≥99.999%

Total trace impurities

≯100 ppm

≯50 ppm

≯10 ppm

Impurity index(ppm)

Max

Typical value Max Typical value Max Typical value

Radioactive elements

U

0.2

0.1

0.05

0.0008

0.0005

Th

0.2

0.1

0.05

0.0008

0.0005

Alkali metal elements

Li

1

0.05

0.02

0.01

0.01

0.003

Na

5

1

0.5

0.2

0.1

0.05

K

5

1

0.1

0.05

0.05

0.03

Mo,Re

10

5

10

5

1

0.5

Fe,Cr

10

5

5

3

0.5

0.3

Ca,Si,Cu,Ni,Al,Zn,Sn,Mn,Co,Hg,V

2

1

0.5

0.3

0.2

0.2

P,As,Se

2

1

0.5

0.2

0.2

0.2

B,Pb,Sb,Be,Ba,Bi,Cd,Ge,Nb,Pt,Mg,Zr,Au,In,Ga,Ag

1

0.5

0.5

0.1

0.1

0.1

All other individual elements

1

0.5

0.5

0.1

0.1

0.1

Gas analysis

(≯,ppm)

O

C

N

H

S

30

20

20

20

10

 

Depending on the purpose of use, there are different requirements for the impurity content of high-purity tungsten targets and tungsten-titanium targets. Generally, the chemical purity is required to be between 99.99% and 99.999%. We can also customize other specifications suitable for the application according to user requirements.

Keyword:
Tungsten target
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