Product manual

Ion implantation is a kind of material surface modification high and new technology that has been vigorously developed and widely used internationally in the past 30 years. It has realized the optimization of the surface performance of the material or can obtain some new excellent performance. Due to the unique and prominent features of this high-tech, it is a very important technology in modern integrated circuit manufacturing. It uses an ion implanter to achieve semiconductor doping and change the conductivity of the semiconductor and the structure of the transistor.

Application

Since the ion source is converted to plasma ions during ion implantation, the operating temperature will be above 2000 ℃, and the ion beam will also generate a large amount of kinetic energy when the ion beam erupts, and the general metal will quickly melt. Therefore, inert metals with relatively large mass and density are required to maintain the direction of the ion beam and increase component durability. Tungsten material has the advantages of stable high temperature chemical performance, low thermal denaturation and long service life. It has become the first choice for ion source parts and consumables of ion implanters in the semiconductor industry. These are collectively referred to as ion implanted tungsten parts

• Mo ion implantation parts