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Detailed description
- 产品描述
-
- Commodity name: Tungsten Titanium target
- Commodity ID: 1443195127311519744
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
Application:
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
Specification:
Name
Molecular formula Specification Size
Relative density Grain size Defect rate Tungsten target W
4N(99.99%)
Inch mm
≥99%
≯50µm
0
5N(99.999%)
D(6,8,10,12)
H(0.25,0.5,0.75)
Diameter 150～350
Thickness 6～25
Tungsten Titanium Target WTi10
WTi20
4N(99.99%)
≥99%
≯50µm
0
4N5(99.995%)
Chemical component
Specification grade
Chemical index
W/(W+Ti)≥99.99%
W/(W+Ti)≥99.995%
W≥99.999%
Total trace impurities ≯100 ppm
≯50 ppm
≯10 ppm
Impurity index(ppm)
Max
Typical value Max Typical value Max Typical value Radioactive elements
U
—
0.2
0.1
0.05
0.0008
0.0005
Th
—
0.2
0.1
0.05
0.0008
0.0005
Alkali metal elements
Li
1
0.05
0.02
0.01
0.01
0.003
Na
5
1
0.5
0.2
0.1
0.05
K
5
1
0.1
0.05
0.05
0.03
Mo，Re
10
5
10
5
1
0.5
Fe，Cr
10
5
5
3
0.5
0.3
Ca，Si，Cu，Ni，Al，Zn，Sn，Mn，Co，Hg，V
2
1
0.5
0.3
0.2
0.2
P，As，Se
2
1
0.5
0.2
0.2
0.2
B，Pb，Sb，Be，Ba，Bi，Cd，Ge，Nb，Pt，Mg，Zr，Au，In，Ga，Ag
1
0.5
0.5
0.1
0.1
0.1
All other individual elements 1
0.5
0.5
0.1
0.1
0.1
Gas analysis
（≯，ppm）
O
C
N
H
S
30
20
20
20
10
Depending on the purpose of use, there are different requirements for the impurity content of high-purity tungsten targets and tungsten-titanium targets. Generally, the chemical purity is required to be between 99.99% and 99.999%. We can also customize other specifications suitable for the application according to user requirements.
Key words:- Tungsten Titanium target
- WTi10
- WTi20
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